C4264 데이터 시트보기 (PDF) - Renesas Electronics

부품명

상세내역

제조사

C4264

Silicon NPN Epitaxial

Renesas Electronics 

2SC4264

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector to emitter saturation voltage

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Symbol

V(BR)CBO

ICBO

ICEO

IEBO

VCE(sat)

hFE

Cob

fT

Min

20

—

—

—

—

20

—

1.4

(Ta = 25°C)

Typ Max Unit

Test conditions

—

—

V IC = 10 µA, IE = 0

—

0.5

µA VCB = 15 V, IE = 0

—

10

µA VCE = 11 V, RBE = ∞

—

1.0

µA VEB = 3 V, IC = 0

—

0.7

V IC = 10 mA, IB = 5 mA

—

—

VCE = 10 V, IC = 5 mA

—

1.5

pF VCB = 10 V, IE = 0, f = 1MHz

—

—

GHz VCE = 10 V, IC = 10 mA

Rev.3.00 Aug 10, 2005 page 2 of 5

Share Link: