2SC5137 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

제조사

2SC5137

Silicon NPN Epitaxial Transistor

Hitachi -> Renesas Electronics 

2SC5137

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

8

V

1.5

V

20

mA

80

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Symbol Min

I CBO

—

I CEO

—

I EBO

—

hFE

50

Cob

—

Gain bandwidth product

Power gain

fT

7

PG

12

Noise figure

NF

—

Typ Max Unit

—

10

µA

—

1

mA

—

10

µA

120 250

0.45 0.8 pF

10

—

16.5 —

GHz

dB

1.5 2.5 dB

Test conditions

VCB = 15 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 10 mA

VCB = 5 V, IE = 0,

f = 1 MHz

VCE = 5 V, IC = 10 mA

VCE = 5 V, IC = 10 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

2

Share Link: