NE85002 데이터 시트보기 (PDF) - California Eastern Laboratories.

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NE85002

2 WATT C-BAND POWER GaAs MESFET

California Eastern Laboratories. 

NE85002 SERIES

ABSOLUTE MAXIMUM RATINGS (TC = 25°C)

SYMBOLS

VDS

VGD

VGS

ID

IG

TCH

TSTG

PT

PARAMETERS

Drain to Source Voltage

Gate to Drain

Gate to Source Voltage

Drain Current

Gate Current

Channel Temperature

Storage Temperature

Total power Dissipation

UNITS

V

V

V

A

mA

°C

°C

W

RATINGS

15

-18

-12

2.5

13

175

-65 to +175

13

NE8500295-6

LARGE SIGNAL IMPEDANCES

FREQUENCY

ZIN

GHz

Ω

ZOUT

Ω

5.90

13.16 - j44.75

11.48 - j21.52

6.20

22.77 - j59.68

16.16 - j25.02

6.40

149.70 - j73.98

23.44 - j40.36

6.50

43.58 - j56.13

12.87 - j11.86

ZIN is the impedance of the input matching circuit as seen by the gate.

ZOUT is the impedance of the output matching circuit as seen by the

drain.

RECOMMENDED

OPERATING CONDITIONS

SYMBOLS PARAMETERS UNITS MIN

VDS Drain to Source Voltage V

9

TC

Channel Temperature °C

GCOMP Input Power

dBCOMP

Rg

Gate Resistance

kΩ

TYP

1

MAX

10

130

3

2

TYPICAL PERFORMANCE CURVE (TC = 25°C)

POWER DERATING CURVE

12

8

4

0

0

50

100

150

200

Case Temperature, TC (°C)

OUTPUT POWER vs. INPUT POWER

40

30

-4

-6

-8

20

10

0

0 5 10 15 20 25 30 35 40

Input Power, PIN (dBm)

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