MSAFX50N20A 데이터 시트보기 (PDF) - Microsemi Corporation

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MSAFX50N20A

N-Channel Enhancement Mode Power Mosfet

Microsemi Corporation 

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

N-Channel Enhancement Mode

Power Mosfet

DEVICES

MSAFX50N20A

200 Volts

50 Amps

45 mΩ

FEATURES

¾ Ultrafast body diode

¾ Rugged polysilicon gate cell structure

¾ Increased Unclamped Inductive Switching (UIS) capability

¾ Hermetically sealed, surface mount power package

¾ Low package inductance

¾ Very low thermal resistance

¾ Reverse polarity available upon request

Table 1 – ABSOLUTE MAXIMUM RATINGS (Tc = +25°C unless otherwise noted)

Parameters / Test Conditions

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C

Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS = 1MΩ

Continuous Gate-to-Source Voltage

Transient Gate-to-Source Voltage

Continuous Drain Current

Peak Drain Current, pulse width limited by TJmax

TJ = 25°C

TJ = 100°C

Repetitive Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Voltage Rate of Change of the Recovery Diode

@ IS ≤ IDM, di/dt ≤ 100A /μs, VDD ≤ VDSS, TJ ≤ 150°C

Power Dissipation

Junction Temperature Range

Storage Temperature Range

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

Thermal Resistance, Junction to Case

Symbol

BVDSS

BVDGR

VGS

VGSM

ID25

ID100

IDM

IAR

EAR

EAS

Max.

200

200

+/-20

+/-30

50

40

200

50

30

TBD

Unit

V

V

V

V

A

A

A

mJ

mJ

dv/dt

5.0

V/ns

PD

300

W

Tj

-55 to +150 °C

Tstg

-55 to +150 °C

IS

50

A

ISM

200

A

θJC

0.25

°C/W

T4-LDS-0203 Rev. 1 (110640)

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