MHPM6B10N120 데이터 시트보기 (PDF) - Motorola => Freescale
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MHPM6B10N120 Datasheet PDF : 10 Pages
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MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
TYPICAL CHARACTERISTICS
(see also application information)
2.5
td(on)
2.0
25°C
TJ = 125°C
1.5
TJ = 125°C
1.0
25°C
tr
0.5
VCE = 600 V
VGE = 15 V
RG = RG(RECOMMENDED)
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
Figure 7. Inductive Switching Times versus
Collector Current
6.0
5.0
4.0
3.0
2.0
td(on)
25°C
TJ = 125°C
TJ = 125°C
25°C
1.0
tr
0
0
0.5
1.0
1.5
2.0
2.5
3.0
RG, GATE RESISTANCE
(NORMALIZED: RG/RG(RECOMMENDED))
Figure 8. Inductive Switching Times versus
Gate Resistance
2.5
Eon, TJ = 125°C
2.0
Eon, TJ = 25°C
1.5
1.0
Eoff, TJ = 125°C
Eoff, TJ = 25°C
0.5
VCE = 600 V
VGE = 15 V
RG = RG(RECOMMENDED)
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
Figure 9. Turn–On and Turn–Off Energy
Losses versus Collector Current
3.0
Eon, TJ = 125°C
2.5
Eon, TJ = 25°C
2.0
Eoff, TJ = 125°C
1.5
1.0
Eoff, TJ = 25°C
VCE = 600 V
0.5 VGE = 15 V
IC = ICmax
0
0
0.5
1.0
1.5
2.0
2.5
3.0
RG, GATE RESISTANCE
(NORMALIZED: RG/RG(RECOMMENDED))
Figure 10. Turn–On and Turn–Off Energy
Losses versus Gate Resistance
100
1000
10
Irr
1.0 trr
TJ = 125°C
25°C
TJ = 125°C
25°C
V = 600 V
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
IF, FORWARD CURRENT (NORMALIZED: IF/IFmax)
Figure 11. Reverse Recovery Characteristics
— Free–Wheeling Diode
Ciss
100
Coss
10
Crss
1.0
0 5.0 10 15 20 25 30 35 40
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. Capacitance Variation
Motorola IGBT Device Data
5
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