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MTB50N06V

TMOS V Power Field Effect Transistor D2PAK for Surface Mount

Motorola => Freescale 

MTB50N06V

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

—

—

Vdc

—

69

—

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IDSS

IGSS

µAdc

—

—

10

—

—

100

—

—

100

nAdc

VGS(th)

2.0

2.7

4.0

Vdc

—

3.0

—

mV/°C

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 21 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 42 Adc)

(ID = 21 Adc, TJ = 150°C)

Forward Transconductance (VDS = 6.25 Vdc, ID = 20 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 25 Vdc, ID = 42 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 42 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 42 Adc, VGS = 0 Vdc)

(IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

—

0.025 0.028 Ohm

Vdc

—

1.4

1.7

—

—

1.6

16

23

—

mhos

—

1644

2320

pF

—

465

660

—

112

230

—

12

20

ns

—

122

250

—

64

110

—

54

90

—

47

70

nC

—

9

—

—

21

—

—

16

—

Vdc

—

1.06

2.5

—

0.99

—

Reverse Recovery Time

(See Figure 14)

(IS = 42 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

trr

ta

tb

QRR

LD

—

84

—

ns

—

73

—

—

11

—

—

0.28

—

µC

nH

—

3.5

—

—

4.5

—

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

—

7.5

—

nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

2

Motorola TMOS Power MOSFET Transistor Device Data

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