DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
Pulsed
25
VGS = 4.0 V
20
10 V
15
10
5
0
ID = 18 A
−50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/μs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Drain Current - A
2SK3402
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0
0.5
1.0
1.5
VF(S-D) - Body Diode Forward Voltage - V
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(off)
td(on)
10
1
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
70
14
VDD = 48 V
60
30 V
50
12 V
VGS
12
10
40
8
VDS
30
6
20
4
10
2
ID = 36 A
0
0 10 20 30 40 50 60 70 80
QG - Gate Charge - nC
Data Sheet D14473EJ4V0DS
5