FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
TA = −55˚C
25˚C
75˚C
1
150˚C
0.1
0.01
1
VDS = 10 V
2
3
4
5
6
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = 150˚C
75˚C
25˚C
1
−55˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
40
Pulsed
35
30
25
20
VGS = 4.0 V
15
10 V
10
5
0
1
10
100
1000
ID - Drain Current - A
2SK3402
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
Pulsed
160
120
VGS = 10 V
80
4.0 V
40
0
0
1
2
3
4
VDS - Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
40
30
20
ID = 18 A
10
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = 10 V
ID = 1 mA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14473EJ4V0DS