2SK3402 데이터 시트보기 (PDF) - Renesas Electronics
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2SK3402 Datasheet PDF : 10 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3402
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3402 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-State Resistance
RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A)
• Low Ciss : Ciss = 3200 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3402
TO-251 (MP-3)
2SK3402-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±36
A
±144
A
Total Power Dissipation (TC = 25°C)
PT1
40
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
–55 to +150 °C
IAS
35
A
EAS
123
mJ
(TO-252)
Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14473EJ4V0DS00 (4th edition)
Date Published August 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999, 2000
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