FMMTL619(2005) 데이터 시트보기 (PDF) - Diodes Incorporated.

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FMMTL619
(Rev.:2005)

SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

Diodes Incorporated. 

SOT23 NPN SILICON PLANAR HIGH GAIN

MEDIUM POWER TRANSISTOR

ISSUE 2 – NOVEMBER 2005

FEATURES

Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A

COMPLEMENTARY TYPE – FMMTL720

FMMTL619

E

C

PARTMARKING DETAIL – L69

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Base Current

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

Ptot

Tj:Tstg

VALUE

100

50

5

1.25

2

200

500

-55 to +150

B

UNIT

V

V

V

A

A

mA

mW

°C

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