BCW66H 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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BCW66H

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

Characteristics (Tj = 25/C)

Collector saturation volt. – Kollektor-Sättigungsspg. 1)

IC = 100 mA, IB = 10 mA

VCEsat

IC = 500 mA, IB = 50 mA

VCEsat

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 100 mA, IB = 10 mA

VBEsat

IC = 500 mA, IB = 50 mA

VBEsat

DC current gain – Kollektor-Basis-Stromverhältnis 1)

BCW 65A / 66F hFE

VCE = 10 V, IC = 100 :A BCW 65B / 66G hFE

BCW 65C / 66H hFE

BCW 65A / 66F hFE

VCE = 1 V, IC = 10 mA BCW 65B / 66G hFE

BCW 65C / 66H hFE

BCW 65A / 66F hFE

VCE = 1 V, IC = 100 mA BCW 65B / 66G hFE

BCW 65C / 66H hFE

BCW 65A / 66F hFE

VCE = 2 V, IC = 500 mA BCW 65B / 66G hFE

BCW 65C / 66H hFE

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 50 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEB0

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCW 65, BCW 66

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

–

–

300 mV

–

–

700 mV

–

–

1.25 V

–

–

2V

35

–

–

50

–

–

80

–

–

75

–

–

110

–

–

180

–

–

100

160

250

160

250

400

250

350

630

–

35

–

–

60

–

–

100

–

–

170 MHz

–

–

6 pF

–

–

60 pF

–

RthA

420 K/W 2)

BCW 67, BCW 68

Marking – Stempelung

BCW 65A = EA BCW 65B = EB BCW 65C = EC

BCW 66F = EF BCW 66G = EG BCW 66H = EH

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

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