CPH6355 데이터 시트보기 (PDF) - ON Semiconductor

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CPH6355

P-Channel Power MOSFET –30V, –3A, 169mΩ, Single CPH6

ON Semiconductor 

CPH6355

Electrical Characteristics at Ta=25°C

Parameter

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain to Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Diode Forward Voltage

Symbol

Conditions

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=--1mA, VGS=0V

VDS=--30V, VGS=0V

VGS=±16V, VDS=0V

VDS=--10V, ID=--1mA

VDS=--10V, ID=--1.5A

ID=--1.5A, VGS=--10V

ID=--0.5A, VGS=--4.5V

ID=--0.5A, VGS=--4V

VDS=--10V, f=1MHz

See specified Test Circuit.

VDS=--15V, VGS=--10V, ID=--3A

IS=--3A, VGS=0V

Switching Time Test Circuit

VIN

0V

--10V

VIN

PW=10μs

D.C.≤1%

G

VDD= --15V

ID= --1.5A

RL=15Ω

D

VOUT

CPH6355

P.G

50Ω

S

Ratings

Unit

min

typ

max

--30

V

--1

μA

±10

μA

--1.2

--2.6

V

2.3

S

130

169 mΩ

197

276 mΩ

223

313 mΩ

172

pF

51

pF

36

pF

4.6

ns

6.6

ns

19.4

ns

11.4

ns

3.9

nC

0.6

nC

0.8

nC

--0.95

--1.5

V

Ordering Information

Device

CPH6355-TL-H

Package

CPH6

Shipping

3,000pcs./reel

memo

Pb Free and Halogen Free

No.8933-2/6

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