Philips Semiconductors
Quadruple ESD transient voltage suppressor
Product specification
BZA420A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point one or more diodes loaded
VALUE
125
UNIT
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode
VZ
VF
VZSM
IR
rdif
SZ
Cd
working voltage
forward voltage
IZ = 1 mA
19
IF = 200 mA
−
non-repetitive peak reverse voltage IZSM = 0.7 A; tp = 1 ms −
reverse current
VR = 15 V
−
differential resistance
IZ = 1 mA
−
temperature coefficient of working IZ = 5 mA
−
voltage
diode capacitance
see Fig.5
VR = 0; f = 1 MHz −
VR = 15 V; f = 1 MHz −
TYP.
20
−
−
−
−
16.2
−
−
MAX.
21
1.3
28
100
125
−
48
14
UNIT
V
V
V
nA
Ω
mV/K
pF
pF
1999 May 20
3