BUX22 데이터 시트보기 (PDF) - Inchange Semiconductor
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BUX22 Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
isc Product Specification
BUX22
DESCRIPTION
·Fast Switching Speed
·High DC Current Gain-hFE=20~60@IC = 10A
·Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 10A
APPLICATIONS
·Designed for use in motor control and switching
circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEX
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
(VBE= -1.5V)
Collector-Emitter Voltage
300
V
300
V
250
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
40
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
8
A
PC
Collector Power Dissipation @TC=25℃ 350
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.5 ℃/W
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
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