BSP300
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 0.19 A, VGS = 10 V
50
Ω
R
40
DS (on)
35
30
25
98%
20
typ
15
10
5
0
-60
-20
20
60
100 °C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
V
GS(th)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
98%
typ
2%
20
60
100 °C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 0
pF
C
10 2
A
I
F
C
iss
10 -1
10 1
C
oss
C
rss
10 0
0
5 10 15 20 25 30 V 40
V
DS
10 -2
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -3
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Rev 2.0
Page 7
2008-03-26