BSP89(1999) 데이터 시트보기 (PDF) - Infineon Technologies

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BSP89
(Rev.:1999)

SIPMOS ® Small-Signal Transistor

Infineon Technologies 

BSP 89

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 0.36 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 0.28 A

RGS = 50 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 0.28 A

RGS = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 0.28 A

RGS = 50 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 0.28 A

RGS = 50 Ω

gfs

S

0.14

0.36

-

Ciss

-

pF

80

110

Coss

-

15

25

Crss

-

8

12

td(on)

ns

-

tr

5

8

-

td(off)

10

15

-

tf

30

40

-

20

27

Data Sheet

3

05.99

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