BLU30 데이터 시트보기 (PDF) - New Jersey Semiconductor

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BLU30

UHF power transistor

New Jersey Semiconductor 

-/

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

UHF power transistor

, U'nc.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

BLU30/12

DESCRIPTION

N-P-N silicon planar epitaxial

transistor primarily intended for use in

mobile radio transmitters in the

470 MHz communications band.

FEATURES:

• multi-base structure and

emitter-ballasting resistors for an

optimum temperature profile

• gold metallization ensures

excellent reliability

• internal matching to achieve an

optimum wideband capability and

high power gain

The transistor has a 6-lead flange

envelope with a ceramic cap

(SOT-119). All leads are isolated from

the flange.

QUICK REFERENCE DATA

Envelope

Mode of operation

Collector-emitter voltage (d.c.)

Frequency

Load power

Power gain

Collector efficiency

Heatsink temperature

PIN CONFIGURATION

SOT-1 19

class-B; c.w.

VCE

12,5 V

f

470 MHz

PL

30 W

GP > 6,0 dB

T!C > 55 %

Th

25 °C

PINNING

PIN

1

2

3

4

5

6

DESCRIPTION

emitter

emitter

base

collector

emitter

emitter

Fig.1 Simplified outline, SOT119A.

VI Semi-C (inductors reserves the right to change lest conditions, parameter limin ;ind package dimensions without notice

Information lunmntd by NJ Stmi-Conductort is believed to be both accurate ami reliable it the lime of going to press. However \

Scmi-C oudutiors .b.sumcs no responsibility for ;my errors i>r omissions discovered in its use NJ Seiiu-Coiiduihire eneounaes

'.ii-irmicrs t n t c i i f v ih;ii Jnlashctts :irccurrent hefcrc placing .Tilers

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