BD546B 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD546B Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BD546/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD546
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD546A
BD546B
IC= -30mA ;IB=0
BD546C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.625A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2A
VBE(on) Base-Emitter On Voltage
IC= -10A; VCE= -4V
BD546
VCE= -40V; VBE= 0
ICES
Collector
Cutoff Current
BD546A
BD546B
VCE= -60V; VBE= 0
VCE= -80V; VBE= 0
BD546C
VCE= -100V; VBE= 0
ICEO
Collector
Cutoff Current
BD546/A
VCE= -30V; IB= 0
BD546B/C VCE= -60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -5A; VCE= -4V
hFE-3
DC Current Gain
IC= -10A; VCE= -4V
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= -6A; IB1= -IB2= -0.6A;
RL= 5Ω; VBE(off)= 4V
MIN TYP. MAX UNIT
-40
-60
V
-80
-100
-0.8
V
-1.0
V
-1.8
V
-0.4 mA
-0.7 mA
-1.0 mA
60
25
10
0.4
μs
0.7
μs
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