BDW51 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BDW51 Datasheet PDF : 2 Pages
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J.E.IS.S.II
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, Line.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDW51/A/B/C
DESCRIPTION
• Collector Current -lc= 15A
• Collector-Emitter Sustaining Voltage-
: VCEo(sus) = 45V(Min)- BDW51; 60V(Min)- BDW51A
SOV(Min)- BDW51B; lOOV(Min)- BDW51C
• Complement to Type BDW52/A/B/C
APPLICATIONS
• Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
BDW51
45
VCBO
Collector-Base
Voltage
BDW51A
60
V
BDW51B
80
BDW51C
100
BDW51
45
VCEO
Collector-Emitter
Voltage
BDW51A
60
V
BDW51B
80
BDW51C
100
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
15
A
I CM
Collector Current-Peak
20
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
7
A
125
W
200
°C
Tstg
Storage Temperature Range
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.4
UNIT
'CM/
Quality Semi-Conductors
3
J
1f
^S
2
PIN
1.BA3E
2. BUIITTER
3. COLLECT OR (CAS E)
TO-3 package
JI
I : 1
*t E
1= C
—*IU— D JPL
1^1
^ / ^ t X^K^XJ
^-3—05 c> B
f V^j,xx' \i I
nun
DM* MM MAX
A
3900
B 2530 26.67
C
7.80 8.30
D 090 1 10
E
1.40 1.60
!i
10-32
H
546
K «.40 1350
L 16.75 17.05
N 1940 19.62
Q
400 420
U 3000 3020
y 4.30 450
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