BC548B 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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BC548B

General Purpose NPN Transistors

Diotec Semiconductor Germany  

Characteristics

DC current gain – Kollektor-Basis-Stromverhältnis 1)

Tj = 25°C

VCE = 5 V, IC = 10 µA

Group A

Group B

hFE

Group C

VCE = 5 V, IC = 2 mA

Group A

Group B

hFE

Group C

VCE = 5 V, IC = 100 mA

Group A

Group B

hFE

Group C

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

VCE = 80 V, (B-E short)

VCE = 50 V, (B-E short)

VCE = 30 V, (B-E short)

BC546

BC547

ICES

BC548 / BC549

VCE = 80 V, Tj = 125°C, (B-E short)

BC546

VCE = 50 V, Tj = 125°C, (B-E short)

BC547

ICES

VCE = 30 V, Tj = 125°C, (B-E short) BC548 / BC549

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-Emitter-voltage – Basis-Emitter-Spannung 1)

VBEsat

VCE = 5 V, IC = 2 mA

VCE = 5 V, IC = 10 mA

VBE

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 µA, RG = 2 kΩ

f = 1 kHz, Δf = 200 Hz

F

Thermal resistance junction to ambient

Wärmewiderstand Sperrschicht – Umgebung

RthA

Min.

–

–

–

110

200

420

–

–

–

–

–

–

–

–

–

–

–

–

–

580 mV

–

–

–

–

–

–

BC546 ... BC549

Typ.

Kennwerte

Max.

90

–

150

–

270

–

–

220

–

450

–

800

120

–

200

–

400

–

0.2 nA

0.2 nA

0.2 nA

–

–

–

15 nA

15 nA

15 nA

4 µA

4 µA

4 µA

80 mV

200 mV

250 mV

600 mV

700 mV

–

900 mV

–

660 mV

–

700 mV

770 mV

300 MHz

–

3.5 pF

6 pF

9 pF

–

2 dB

1.2 dB

< 200 K/W 2)

10 dB

4 dB

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

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