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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

RF2307 데이터 시트보기 (PDF) - RF Micro Devices

부품명
상세내역
제조사
RF2307
RFMD
RF Micro Devices 
RF2307 Datasheet PDF : 4 Pages
1 2 3 4
4
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
RF2307
GENERAL PURPOSE AMPLIFIER
• Final PA for Low Power Applications
• Portable Battery Powered Equipment
• Broadband Test Equipment
Product Description
4
The RF2307 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 3000MHz.
The device is self-contained with 50input and output
impedances and requires only two external DC biasing
elements to operate as specified.
.156
.152
1
.004
MIN
.017
.195
.191
.050
.240
.056
.232
.052
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF IN 1
GND 2
GND 3
GND 4
8 RF OUT
7 GND
6 GND
5 GND
.022
.018
.008
Package Style: SOP-8
Features
• DC to 3000MHz Operation
• Internally matched Input and Output
• 15dB Small Signal Gain
• 4dB Noise Figure
• 25mW Linear Output Power
• Single Positive Power Supply
Ordering Information
RF2307
General Purpose Amplifier
RF2307 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B2 010228
4-67

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