SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent hFE Linearity
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.).
ᴌComplementary to KTC4075.
ᴌSmall Package.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
-50
-50
-5
-150
-30
100
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
ᴱ
ᴱ
KTA2014
EPITAXIAL PLANAR PNP TRANSISTOR
E
M
B
M
2
1
N
K
DIM MILLIMETERS
D
A
B
2.00+_ 0.20
1.25 +_ 0.15
C
0.90 +_ 0.10
3
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00-0.10
L
0.70
H
M
0.42+_ 0.10
N
0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
S
Type Name
hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
DC Current Gain
hFE (Note) VCE=-6V, IC=-2mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-100mA, IB=-10mA
Transition Frequency
fT
VCE=-10V, IC=-1mA
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Noise Figure
NF
VCE=-6V, IC=-0.1mA
f=1kHz, Rg=10kή
Note : hFE Classification O(2):70ᴕ140, Y(4):120ᴕ240, GR(6):200ᴕ400
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
-0.1
-
4
1.0
MAX.
-0.1
-0.1
400
-0.3
-
7
UNIT
ỌA
ỌA
V
MHz
pF
10
dB
2001. 11. 29
Revision No : 2
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