NTE388 데이터 시트보기 (PDF) - Inchange Semiconductor
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NTE388 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
NTE388
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 800mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE=4V
VCBO
Collector-Base Breakdown Voltage
IC= 1mA; IB= 0
VCEO
Collector-Emitter Breakdown Voltage IC=100mA;IE=0
VEBO
Emitter-Base Breakdown Voltage
IE=1mA;IB= 0
ICEO
Collector Cutoff Current
VCE= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB=5V; IC= 0
hFE-1
DC Current Gain
IC=8A; VCE=4V
hFE-2
DC Current Gain
IC=16A; VCE=4V
MIN TYP. MAX UNIT
1.4
V
4.0
V
2.2
V
400
250
5
500 μA
500 μA
15
60
5
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