FJX3904 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FJX3904 Datasheet PDF : 4 Pages
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FJX3904
NPN Epitaxial Silicon Transistor
• General Purpose Transistor
January 2007
3
2
1 SOT-323
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCES
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
60
40
6
200
350
-55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
V
V
V
mA
mW
°C
Electrical Characteristics* Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
BVCBO
BVCEO
BVEBO
ICEX
hFE
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
VCE(sat)
VBE(sat)
Cob
fT
NF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCE=30V, VEB=3V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCB=5V, IE=0, f=1MHz
VCE=20V, IC=10mA
IC=100µA, VCE=5V, RS=1KΩ
f=10Hz to 15.7KHz
tON
Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
VCC=3V, VBE=0.5V
IC=10mA, IB1=1mA
VCC=3V, IC=10mA
IB1=IB2=1mA
Min.
60
40
6
40
70
100
60
30
0.65
300
Max.
50
Units
V
V
V
nA
300
0.2
V
0.3
V
0.85
V
0.95
V
4
pF
MHz
5
dB
70
ns
250
ns
©2007 Fairchild Semiconductor Corporation
1
FJX3904 Rev. B
www.fairchildsemi.com
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