FJX3904(2002) 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

FJX3904
(Rev.:2002)

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

FJX3904

General Purpose Transistor

3

2

NPN Epitaxial Silicon Transistor

1 SOT-323

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCES

VEBO

IC

PC

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Storage Temperature

Value

60

40

6

200

350

-55 ~ 150

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

BVCBO

BVCEO

BVEBO

ICEX

hFE

Parameter

Collector-Base Breakdown Voltage

* Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

* DC Current Gain

VCE(sat)

VBE(sat)

Cob

fT

NF

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Noise Figure

Test Condition

IC=10µA, IE=0

IC=1mA, IB=0

IE=10µA, IC=0

VCE=30V, VEB=3V

VCE=1V, IC=0.1mA

VCE=1V, IC=1mA

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=100mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

VCB=5V, IE=0, f=1MHz

VCE=20V, IC=10mA

IC=100µA, VCE=5V, RS=1KΩ

f=10Hz to 15.7KHz

Min.

60

40

6

40

70

100

60

30

0.65

300

tON

Turn On Time

tOFF

Turn Off Time

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

VCC=3V, VBE=0.5V

IC=10mA, IB1=1mA

VCC=3V, IC=10mA

IB1=IB2=1mA

Marking

Units

V

V

V

mA

mW

°C

Max.

50

Units

V

V

V

nA

300

0.2

V

0.3

V

0.85

V

0.95

V

4

pF

MHz

5

dB

70

ns

250

ns

S1A

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

Share Link: