Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Cib
Cob
fT
VF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
IC=0.5mA, IE=0
IC=5mA, IB=0
IE=0.5mA, IC=0
VCES=1600V,
IE=0
TC=25°C
TC=125°C
VCE=800V,
VBE=0
TC=25°C
TC=125°C
VEB=12V, IC=0
VCE=3V,
IC=0.4A
TC=25°C
TC=125°C
VCE=10V,
IC=5mA
TC=25°C
TC=125°C
IC=250mA,
IB=25mA
TC=25°C
TC=125°C
IC=500mA,
IB=50mA
TC=25°C
TC=125°C
IC=1A, IB=0.2mA TC=25°C
TC=125°C
IC=500mA,
IB=50mA
TC=25°C
TC=125°C
IC=2A, IB=0.4A
TC=25°C
TC=125°C
VEB=10V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.1A,VCE=10V
IF=0.4A
TC=25°C
TC=125°C
IF=1A
TC=25°C
TC=125°C
Min.
1600
800
12
20
6
20
20
Typ.
1689
870
14.8
0.01
0.01
0.05
29
15
43
46
0.5
1.5
1.2
0.74
0.61
0.85
0.74
745
56
5
0.76
0.83
Max.
100
1000
100
1000
500
35
1.25
2.5
2.5
1.2
1.1
1.2
1.1
1000
500
1.2
1.5
Units
V
V
V
µA
µA
µA
V
V
V
V
V
pF
pF
MHz
V
V
V
V
©2003 Fairchild Semiconductor Corporation
Rev. C1, June 2003