KSD794 데이터 시트보기 (PDF) - Inchange Semiconductor
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KSD794 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD794
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.15A
ICBO
Collector Cutoff Current
VCB= 45V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
2.0
V
2.0
V
1.0 μA
1.0 μA
30
60
320
60
MHz
40
pF
hFE-2 Classifications
R
O
Y
60-120 100-200 160-320
isc website：www.iscsemi.cn
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