MPS2369 데이터 시트보기 (PDF) - ON Semiconductor

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MPS2369

Switching Transistors NPN Silicon

ON Semiconductor 

ON Semiconductort

Switching Transistors

NPN Silicon

MPS2369

MPS2369A*

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient

Symbol

VCEO

VCES

VCBO

VEBO

IC

PD

TJ, Tstg

Value

15

40

40

4.5

200

625

5.0

–55 to +150

Symbol

Max

RqJA

200

Unit

Vdc

Vdc

Vdc

Vdc

mAdc

mW

mW/°C

°C

Unit

°C/W

*ON Semiconductor Preferred Device

1

2

3

CASE 29–11, STYLE 1

TO–92 (TO–226AA)

COLLECTOR

3

2

BASE

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(1)

(IC = 10 mAdc, IB = 0)

V(BR)CEO

15

MPS2369A

Collector–Emitter Breakdown Voltage

(IC = 10 µAdc, VBE = 0)

V(BR)CES

40

MPS2369,A

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

40

MPS2369,A

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

4.5

MPS2369,A

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

(VCB = 20 Vdc, IE = 0, TA = 125°C)

ICBO

—

MPS2369,A

—

Collector Cutoff Current

(VCE = 20 Vdc, VBE = 0)

ICES

—

MPS2369,A

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

1

EMITTER

Typ

Max

Unit

—

—

Vdc

—

—

Vdc

—

—

Vdc

—

—

Vdc

µAdc

—

0.4

—

30

—

0.4

µAdc

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2001

1

June, 2001 – Rev. 2

Publication Order Number:

MPS2369/D

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