2SD1419 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
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2SD1419 Datasheet PDF : 2 Pages
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2SD1419
NPN Silicon epitaxial Transistor
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
*Pulse test
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE
fT
Cob
Testconditons
IC = 10 ìA, IE = 0
IC = 1 mA, RBE =
IE= 10 ìA, IC = 0
VCB = 100 V, IE = 0
VCE = 5 V, IC = 150 mA*
VCE = 5 V, IC = 500 mA*
IC = 500 mA, IB = 50 mA*
VCE = 5 V, IC = 150 mA*
VCE = 5 V, IC = 150 mA*
VCB = 10 V, IE = 0, f = 1 MHz
hFE Classification
Marking
hFE
DD
60 120
DE
100 200
Min Typ Max Unit
120
V
100
V
5
V
10 ìA
60
200
30
1
V
1.5 V
140
MHz
12
pF
Revision:20170701-P1
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