HYB5117805BJ-50 데이터 시트보기 (PDF) - Infineon Technologies
부품명
상세내역
제조사
HYB5117805BJ-50 Datasheet PDF : 25 Pages
| |||
HYB5117805BSJ-50/-60/-70
2M x 8-EDO DRAM
AC Characteristics 5)6)
16E
TA = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
common parameters
Random read or write cycle time tRC
RAS precharge time
tRP
RAS pulse width
tRAS
CAS pulse width
tCAS
Row address setup time
tASR
Row address hold time
tRAH
Column address setup time
tASC
Column address hold time
tCAH
RAS to CAS delay time
tRCD
RAS to column address delay
tRAD
RAS hold time
tRSH
CAS hold time
tCSH
CAS to RAS precharge time
tCRP
Transition time (rise and fall)
tT
Refresh period
tREF
84 –
104 –
124 –
ns
30 –
40 –
50 –
ns
50 10k 60 10k 70 10k ns
8
10k 10 10k 12 10k ns
0
–
0
–
0
–
ns
8
–
10 –
10 –
ns
0
–
0
–
0
–
ns
8
–
10 –
12 –
ns
12 37 14 45 14 53 ns
10 25 12 30 12 35 ns
13
15 –
17 –
ns
40
50 –
60 –
ns
5
–
5
–
5
–
ns
1
50 1
50 1
50 ns 7
–
32 –
32 –
32 ms
Read Cycle
Access time from RAS
tRAC
Access time from CAS
tCAC
Access time from column address tAA
OE access time
tOEA
Column address to RAS lead time tRAL
Read command setup time
tRCS
Read command hold time
tRCH
Read command hold time
tRRH
referenced to RAS
CAS to output in low-Z
tCLZ
Output buffer turn-off delay
tOFF
Output turn-off delay from OE tOEZ
–
50 –
60 –
70 ns 8, 9
–
13 –
15 –
17 ns 8, 9
–
25 –
30 –
35 ns 8,10
–
13 –
15 –
17 ns
25 –
30 –
35 –
ns
0
–
0
–
0
–
ns
0
–
0
–
0
–
ns 11
0
–
0
–
0
–
ns 11
0
–
0
–
0
–
ns 8
0
13 0
15 0
17 ns 12
0
13 0
15 0
17 ns 12
Semiconductor Group
7
Share Link: 