HYB5117405BJ-500 데이터 시트보기 (PDF) - Siemens AG

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HYB5117405BJ-500

4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO)

Siemens AG 

HYB5116(7)405BJ/BT-50/-60/-70

4M x 4-EDO DRAM

tRAS

tRP

RAS

CAS

V

IH

tRCD

VIL

tCRP

V

IH

VIL

tCSH

tHPC

tCAS

tCP

tCAS

Address

tASR tRAH tASC tCAH

V

IH

VIL

Row Column 1

tRAD

tASC tCAH

Column 2

tRHCP

tRSH

tCAS

tRAL

tASC tCAH

Column N

tCRP

tRCS

tRRH

tRCH

VIH

WE

VIL

V

OH

OE

VOL

I/O

V

IH

(Output) VIL

tOES

tOEA

tCAC

tAA

tCPA

tCAC

tAA

tCPA

tOFF

tRAC

tAA

tCAC

tCLZ

tCOH

Data Out

1

tCOH

Data Out

2

tOEZ

Data Out

N

WL5

“H” or “L”

Hyper Page Mode (EDO) Read Cycle

Semiconductor Group

16

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