F1S30P05 데이터 시트보기 (PDF) - Fairchild Semiconductor
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F1S30P05 Datasheet PDF : 8 Pages
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RFG30P05, RFP30P05, RF1S30P05SM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-40
-30
-20
-10
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-200
-100
100µs
1ms
-10
-1
-1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS MAX = -50V
TC = 25oC
-10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
-100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2002 Fairchild Semiconductor Corporation
-500
-100
VGS = -20V
VGS = -10V
TC = 25oC
FOR TEMPERATURES
ABOVE
25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
=
I25
-1--7---5-1---5-–--0--T----C-
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 5. PEAK CURRENT CAPABILITY
RFG30P05, RFP30P05, RF1S30P05SM Rev. B
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