2SC2261 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC2261 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Volta'ge lc= 50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; lc= 0
rips
DC Current Gain
lc= 3A; VCE= 4V
fr
Current-Gain—Bandwidth Product
IE=-0.5A;VCE=12V
2SC2261
MIN TYP. MAX UNIT
120
V
1.5
V
1.0 mA
1.0 mA
30
15
MHz
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