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2SC2243 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SC2243
NJSEMI
New Jersey Semiconductor 
2SC2243 Datasheet PDF : 2 Pages
1 2
t3s.ini-Condu.ctoi iJ-* 10ducts,, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2243
DESCRIPTION
• High Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 400V (Min)
• High Switching Speed
APPLICATIONS
• Power switching
• Power amplification
• Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
VCBO
Collector-Base Voltage
450
UNIT
V
3,
PIN .BASE
i.BvUTTER
3. COLLECT OR (CASE)
TO-3 package
2
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
T,
Junction Temperature
Tstg
Storage Temperature Range
400
V
5
V
5
A
10
A
2
A
100
W
200
"C
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0
°c/w
r• A "*1
[*- N-*j
1
1 _ —(,
IE 1
-JU-D (PL
V-
f~
xd^\
< ] t
iB
t
VL^x"?
C
1
'~f353
DIM
A
B
C
0
E
Q
H
K
I
K
_3
I1
V
nuii
MN MAX
3900
?S30 2867
7.80 8 5 0
0.30 1 to
1.10 1.60
1 0 32
S4&
ii.iO
1675
1940
400
30,00
430
1350
1705
1962
420
3020
450
NJ Semi-CoiKluctors reserves the right It) change test conditions, parameter limits and package dimensions uithout
noiice. Information furnished by NJ Semi-Conductors is believed lo he hoth accurate and reliable at the time ot'goiiu
lo press. I louever. N.I Seini-C'oiidiictors assumes no responsibility lor any errors or omissions discovered in its use.
N.I Seini-C'onduciors encoiirayes cuslomers to \erily thai dalasheels are ciirrenl helore placing orders.
Quality Serni-Conductors

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