ST083S04PFN1L(1994) 데이터 시트보기 (PDF) - International Rectifier
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ST083S04PFN1L Datasheet PDF : 9 Pages
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ST083S Series
Bulletin I25185 rev. B 03/94
1E4
1E3
1E2
tp
1E1
1E1
20 joules per pulse
10
5
23
1
0.5
0.3
0.2
0.1
ST083S Series
Sinusoidal pulse
ST083S Series
Rectangular pulse
tp
di/dt = 50A/µs
20 joules per pulse
7.5
4
2
1
0.5
0.3
0.2
0.1
1E2
1E3
1E14E41E11E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10 tr<=1 µs
(a)
(b)
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST083S Series Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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