2SD1110 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1110 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1110
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
VBE(sat) Base -Emitter Saturation Voltage
IC= 5.0A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
2.0
V
2.0
V
50 μA
50 μA
hFE-1
DC Current Gain
IC= 50mA; VCE= 5V
20
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
40
200
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V
190
pF
15
MHz
hFE-2 Classifications
S
R
Q
40-80 60-120 100-200
isc Website：www.iscsemi.cn
2
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