BC857AT 데이터 시트보기 (PDF) - Infineon Technologies

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BC857AT

PNP Silicon AF Transistor

Infineon Technologies 

BC857T

DC current gain hFE = f (IC)

VCE = 5V

10 3

h FE 5 100 C

25 C

102 -50C

5

EHP00382

Base-emitter saturation voltage

IC = f (VBEsat), hFE = 20

10 2

mA

ΙC

10 1

5

100 C

25 C

-50 C

EHP00379

10 1

10 0

5

5

10 0

10 -2

5 10 -1 5 10 0

5 101 mA 10 2

ΙC

10 -1

0

0.2 0.4 0.6 0.8

V 1.2

V BEsat

6

Nov-29-2001

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