BLV99SL 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BLV99SL Datasheet PDF : 2 Pages
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LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
Ic
ICM
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
Ptot
total power dissipation
Tstg
storage temperature range
Tj
junction operating temperature
CONDITIONS
open emitter
open base
open collector
DC value
peak value
f>1 MHz
f > 1 MHz;
Tmb = 50 °C
MIN.
-
-
-
-
-
MAX.
50
27
3.5
200
600
UNIT
V
V
V
mA
mA
-
6
W
-65 150 °C
-
200
°C
CHARACTERISTICS
T; = 25 °C.
SYMBOL
V(BR)CBO
PARAMETER
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage
V(BR)EBO
emitter-base breakdown voltage
ICES
collector-emitter leakage current
hFE
DC current gain
ESBR
second breakdown energy
Cc
collector capacitance
Cre
feedback capacitance
CONDITIONS
open emitter;
lc = 5 mA
VBE = 0;
lc= 10mA
open collector;
IE = 0.5mA
VBE = 0;
VCE = 27 V
VCE = 20 V;
lc = 150mA
L = 25mH;
RBE = 10ii;
f = 50 Hz
VCB = 24 V;
IE = I, = 0;
f = 1 MHz
VCE = 24 V;
lc = 0;
f = 1 MHz
MIN.
50
27
3.5
-
25
0.5
TYP.
—
—
—
—
—
3
1.3
MAX. UNIT
—
V
—
V
—
V
2
mA
—
mJ
pF
pF
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