MTB52N06V 데이터 시트보기 (PDF) - Motorola => Freescale
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MTB52N06V Datasheet PDF : 10 Pages
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MTB52N06V
SAFE OPERATING AREA
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
10 µs
100 µs
1 ms
10
10 ms
RDS(on) LIMIT
dc
THERMAL LIMIT
1
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
450
400
ID = 52 A
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
1.0E–05
0.01
SINGLE PULSE
1.0E–04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
Figure 13. Thermal Response
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E+00
1.0E+01
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
3
RθJA = 50°C/W
Board material = 0.065 mil FR–4
2.5
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
2.0
1.5
1
0.5
0
25
50
75
100
125
150
175
TA, AMBIENT TEMPERATURE (°C)
Figure 15. D2PAK Power Derating Curve
6
Motorola TMOS Power MOSFET Transistor Device Data
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