BD676A 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BD676A Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -40mA
VeE(on) Base-Emitter On Voltage
lc= -2A; VCE= -3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Em itter Cutoff Current
VCE= -45V IB= 0
VCEF -45V I6= 0
VcB=-45V;lE=0;Tc=100°C
VEB= -5V;lc= 0
hpE
DC Current Gain
lc= -2 A ; VCE= -3V
BD676A
MIN MAX UNIT
-45
V
-2.8
V
-2.5
V
-0.5
mA
-0.2
-2.0
mA
-2.0
mA
750
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