BUT18AF 데이터 시트보기 (PDF) - Inchange Semiconductor
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BUT18AF Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUT18F
BUT18AF
IC=0.1A; IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
ICES
IEBO
Base-emitter saturation voltage
IC=4A; IB=0.8A
Collector
cut-off current
BUT18F
BUT18AF
VCE=850V ;VBE=0
Tj=125℃
VCE=1000V ;VBE=0
Tj=125℃
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
Switching times resistive load
IC=10mA ; VCE=5V
IC=1A ; VCE=5V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A; IB1=-IB2=0.8A
VCC=250V
Product Specification
BUT18F BUT18AF
MIN TYP. MAX UNIT
400
V
450
1.5
V
1.3
V
1.0
2.0
mA
1.0
2.0
10
mA
10
35
10
35
1.0
μs
4.0
μs
0.8
μs
2
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