BYG21K 데이터 시트보기 (PDF) - Shenzhen Taychipst Electronic Co., Ltd
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BYG21K Datasheet PDF : 2 Pages
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Fast Silicon Mesa SMD Rectifier
BYG21K THRU BYG21M
800V-1000V 1.5A
FEATURES
D Glass passivated junction
D Low reverse current
D Soft recovery characteristics
D Fast reverse recovery time
D Good switching characteristics
D Wave and reflow solderable
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
tp=10ms,
half sinewave
I(BR)R=1A, Tj=25°C
Type
Symbol
Value
Unit
BYG21K VR=VRRM
800
V
BYG21M VR=VRRM
1000
V
IFSM
30
A
IFAV
1.5
A
Tj=Tstg –55...+150 °C
ER
20
mJ
Maximum Thermal Resistance
Parameter
Junction lead
Junction ambient
Test Conditions
TL=const.
mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu
Symbol
RthJL
RthJA
RthJA
RthJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Reverse recovery time
Test Conditions
IF=1A
IF=1.5A
VR=VRRM
VR=VRRM, Tj=100°C
IF=0.5A, IR=1A, iR=0.25A
Type
Symbol Min Typ Max Unit
VF
1.5 V
VF
1.6 V
IR
1 mA
IR
10 mA
trr
120 ns
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
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