2SA1494 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SA1494

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1494

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0

-200

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A

ICBO

Collector Cutoff Current

VCB= -200V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= -6V; IC= 0

-2.5 V

-100 μA

-100 μA

hFE

DC Current Gain

IC= -8A ; VCE= -4V

50

180

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

IE= 0 ; VCB= -10V;ftest= 1.0MHz

IE= 1A ; VCE= -12V

500

pF

20

MHz

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -10A ,RL= 4Ω,

IB1= -IB2= -1A,VCC= -40V

0.6

μs

0.9

μs

0.2

μs

‹ hFE Classifications

Y

P

G

50-100 70-140 90-180

isc Website：www.iscsemi.cn

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