M25P16-VME3TGBA 데이터 시트보기 (PDF) - Micron Technology

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M25P16-VME3TGBA

Micron M25P16 Serial Flash Embedded Memory

Micron Technology 

Micron M25P16 Serial Flash Embedded Memory

Configuration and Memory Map

Configuration and Memory Map

Memory Configuration and Block Diagram

Each page of memory can be individually programmed; bits are programmed from 1 to

0. The device is sector or bulk-erasable, but not page-erasable; bits are erased from 0 to

1. The memory is configured as follows:

• 2, 097,152 bytes (8 bits each)

• 32 sectors (512Kb, 65KB each)

• 8,192 pages (256 bytes each)

Figure 7: Block Diagram

HOLD#

W#

S#

C

DQ0

DQ1

Control Logic

High Voltage

Generator

I/O Shift Register

Address Register

and Counter

256 Byte

Data Buffer

Status

Register

1FFFFFh

PDF: 09005aef8456656c

m25p16.pdf - Rev. J 1/18 EN

00000h

256 bytes (page size)

X Decoder

000FFh

17

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2011 Micron Technology, Inc. All rights reserved.

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