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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

M25P16-VME3TGBA 데이터 시트보기 (PDF) - Micron Technology

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M25P16-VME3TGBA
Micron
Micron Technology 
M25P16-VME3TGBA Datasheet PDF : 62 Pages
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Micron M25P16 Serial Flash Embedded Memory
Operating Features
To enter the hold condition, the device must be selected, with S# LOW. The hold condi-
tion starts on the falling edge of the HOLD# signal, if this coincides with serial clock (C)
being LOW. The hold condition ends on the rising edge of the HOLD# signal, if this co-
incides with C being LOW. If the falling edge does not coincide with C being LOW, the
hold condition starts after C next goes LOW. Similarly, if the rising edge does not coin-
cide with C being LOW, the hold condition ends after C next goes LOW.
During the hold condition, DQ1 is HIGH impedance while DQ0 and C are Don’t Care.
Typically, the device remains selected with S# driven LOW for the duration of the hold
condition. This ensures that the state of the internal logic remains unchanged from the
moment of entering the hold condition. If S# goes HIGH while the device is in the hold
condition, the internal logic of the device is reset. To restart communication with the
device, it is necessary to drive HOLD# HIGH, and then to drive S# LOW. This prevents
the device from going back to the hold condition.
Figure 6: Hold Condition Activation
C
HOLD#
HOLD condition (standard use)
HOLD condition (nonstandard use)
PDF: 09005aef8456656c
m25p16.pdf - Rev. J 1/18 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.

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