BA1282 데이터 시트보기 (PDF) - Vishay Semiconductors
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BA1282 Datasheet PDF : 4 Pages
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BA1282, BA1283
Vishay Semiconductors
Band Switching Diodes
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
100
f = 200 MHz
Tj = 25 °C
10
BA1283
1
BA1282
0.1
0.1
94 9076
1
10
100
IF - Forward Current (mA)
Fig. 1 - Dynamic Forward Resistance vs. Forward Current
3.0
f = 200 MHz
2.5
Tj = 25 °C
2.0
1.5
1.0
BA1283
0.5
BA1282
0
0.1
1
10
100
94 9077
VR - Reverse Voltage (V)
Fig. 2 - Diode Capacitance vs. Reverse Voltage
0.71
1.3
1.27
0.152
0.355
95 10329
2.5
24
Fig. 3 - Board for RthJA Definition (in mm)
Document Number: 85525 For technical questions within your region, please contact one of the following:
Rev. 1.9, 05-Aug-10
Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
2
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