KSH44H11 데이터 시트보기 (PDF) - Inchange Semiconductor
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KSH44H11 Datasheet PDF : 3 Pages
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
KSH44H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO * Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)
VBE(sat)
ICEO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC=8A; IB= 400mA
IC=8A; IB= 800mA
VCE= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= 2A; VCE= 1V
IC= 4A; VCE= 1V
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= 0.5A; VCE= 10V
MIN
TYP MAX UNIT
80
V
1.0
V
1.5
V
10
uA
50
uA
60
40
50
MHz
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