
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
S-PARAMETER
VCE = 10 V, IC = 20 mA
Freque.
S11
GHz
MAG
ANG
0.2
0.45
-70.42
0.4
0.4
-177.3
0.6
0.41
150.4
0.8
0.41
126.3
1
0.42
104.6
1.2
0.42
85.22
1.4
0.42
65.91
1.6
0.42
47.16
1.8
0.41
27.84
0.2
0.45
-70.42
S21
MAG
ANG
16.73
150.2
9.3
94.32
6.2
72.41
4.69
55.83
3.75
40.65
3.17
26.22
2.74
13.54
2.4
1.03
2.13
-12.34
16.73
150.2
VCE = 10 V, IC = 5 mA
Freque.
S11
GHz
MAG
ANG
0.2
0.77
-3.8
0.4
0.62
-112.9
0.6
0.52
-174.9
0.8
0.49
150
1
0.48
122.4
1.2
0.48
99.54
1.4
0.48
78.4
1.6
0.48
58
1.8
0.47
37.79
0.2
0.46
17.69
S21
MAG
ANG
6.78
-177.5
6.04
117.8
4.82
83
3.81
61.86
3.09
43.61
2.64
27.16
2.27
13.76
1.97
0.66
1.75
-13.71
1.66
-25.39
isc website:www.iscsemi.cn
5
isc RF Product Specification
2SC5227
S12
MAG
ANG
0.04
89.27
0.06
65.65
0.07
55.63
0.1
47.91
0.12
38.96
0.14
30.11
0.17
21.39
0.2
12.16
0.22
2.27
0.04
89.27
S22
MAG
ANG
0.42
-12.05
0.21
-53.52
0.17
-76.62
0.17
-97.1
0.17
-119
0.17
-138.9
0.18
-158.9
0.19
-177.5
0.21
164.93
0.42
-12.05
S12
MAG
ANG
0.06
99.12
0.08
50.85
0.09
36.61
0.1
30.36
0.11
24.14
0.12
18.43
0.14
13.12
0.17
6.97
0.18
0.2
0.2
-9.01
S22
MAG
ANG
0.8
6.86
0.44
-48.92
0.35
-73.18
0.32
-93.35
0.31
-113.7
0.31
-133.2
0.32
-153.3
0.32
-172.6
0.34
168.78
0.36
150.36