WRITE CYCLE 1 (W Controlled, See Notes 1 and 2)
6227A–20
6227A–25
6227A–35
6227A–45
Parameter
Symbol Min Max Min Max Min Max Min Max Unit Notes
Write Cycle Time
tAVAV
20
—
25
—
35
—
45
—
ns
3
Address Setup Time
Address Valid to End of Write
tAVWL
0
—
0
—
0
—
0
—
ns
tAVWH
15
—
17
—
20
—
25
—
ns
Write Pulse Width
tWLWH,
15
—
17
—
20
—
25
—
ns
tWLEH
Data Valid to End of Write
tDVWH
10
—
10
—
15
—
20
—
ns
Data Hold TIme
Write Low to Data High–Z
tWHDX
0
—
0
—
0
—
0
—
ns
tWLQZ
0
9
0
10
0
15
0
20
ns 4, 5, 6
Write High to Output Active
tWHQX
5
—
5
—
5
—
5
—
ns 4, 5, 6
Write Recovery Time
tWHAX
0
—
0
—
0
—
0
—
ns
NOTES:
1. A write occurs during the overlap of E low and W low.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus con-
tention conditions during read and write cycles.
3. All timings are referenced from the last valid address to the first transitioning address.
4. Transition is measured ± 500 mV from steady–state voltage with load of Figure 1B.
5. This parameter is sampled and not 100% tested.
6. At any given voltage and temperature, tWLQZ max is less than tWHQX min both for a given device and from device to device.
A (ADDRESS)
E (CHIP ENABLE)
W (WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
WRITE CYCLE 1 (W Controlled See Notes 1 and 2)
tAVAV
tAVWH
tAVWL
HIGH–Z
tWLQZ
tWLWH
tWLEH
tDVWH
DATA VALID
HIGH–Z
tWHAX
tWHDX
tWHDX
MOTOROLA FAST SRAM
MCM6227A
5