2N6274 데이터 시트보기 (PDF) - Inchange Semiconductor

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2N6274

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2N6274

DESCRIPTION

·High Switching Speed

·High DC Current Gain-

: hFE= 30-120@ IC= 20A

·Low Collector Saturation Voltage-

: VCE(sat)=1.0V(Min.)@ IC= 20A

·Complement to Type 2N6377

APPLICATIONS

·Designed for use in industrial-military power amplifier and

switching circuit applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector- Base Voltage

120

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

50

A

ICM

Collector Current-Peak

100

A

IBB

Base Current-Continuous

20

A

PC

Collector Power Dissipation @TC=25℃ 250

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

0.7 ℃/W

isc Website：www.iscsemi.cn

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